Carrier thermal escape and retrapping in self-assembled quantum dots

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi
Phys. Rev. B 60, 8276 – Published 15 September 1999
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Abstract

The effects of carrier thermal escape and retrapping on the temperature dependence of the photoluminescence of InAs/GaAs self-assembled quantum dots are investigated. A systematic experimental study of the temperature evolution of the photoluminescence spectra in two different sets of samples is reported. The photoluminescence behavior is well reproduced in terms of a steady state model for the carrier dynamics which takes into account the quantum-dot size distribution, random population effects, and carrier capture, relaxation, and retrapping. The relative contributions of these processes to the photoluminescence thermal quenching is discussed.

  • Received 22 December 1998

DOI:https://doi.org/10.1103/PhysRevB.60.8276

©1999 American Physical Society

Authors & Affiliations

S. Sanguinetti

  • Istituto Nazionale per la Fisica della Materia, Dipartimento di Scienza dei Materiali, Università di Milano “Bicocca,” Via Cozzi 53, I-20125 Milano, Italy

M. Henini

  • School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom

M. Grassi Alessi and M. Capizzi

  • Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Università di Roma “La Sapienza,” Piazzale A. Moro 2, I-00185 Roma, Italy

P. Frigeri and S. Franchi

  • CNR-MASPEC Institute, Pario delle Scienze 37a, I-43010 Fontanini, Parma, Italy

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Vol. 60, Iss. 11 — 15 September 1999

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