Larmor beats and conduction electron g factors in InxGa1xAs/GaAs quantum wells

A. Malinowski, D. J. Guerrier, N. J. Traynor, and R. T. Harley
Phys. Rev. B 60, 7728 – Published 15 September 1999
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Abstract

We report conduction electron g factors ge in strained layer InxGa1xAs/GaAs quantum wells from time-resolved Larmor beats in reflection and cw Hanle luminescence depolarization. Samples had well widths from 3 to 20 nm and x=0.11±0.02. The beat frequency gave |ge| and nuclear Overhauser shift in the Hanle effect revealed its negative sign. The variation of ge with well width parallels that in GaAs/AlxGa1xAs wells, indicating the dominance of nonparabolicity of the bulk conduction band sampled at different electron confinement energies, with important, but weaker, expected effects of strain, quantum-well anisotropy, and barrier penetration.

  • Received 5 March 1999

DOI:https://doi.org/10.1103/PhysRevB.60.7728

©1999 American Physical Society

Authors & Affiliations

A. Malinowski, D. J. Guerrier*, N. J. Traynor, and R. T. Harley

  • Department of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom

  • *Deceased.
  • Present address: Corning S. A., Centre Européen de Recherche de Fontainebleau, 7bis, Avenue de Valvins, 77210 Avon, France.

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Issue

Vol. 60, Iss. 11 — 15 September 1999

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