Abstract
Describing the doped Fullerenes using a generalized Hubbard model, we study the Mott transition for different integer fillings of the band. We use the opening of the energy-gap as a criterion for the transition. is calculated as a function of the on-site Coulomb interaction U using fixed-node diffusion Monte Carlo. We find that for systems with doping away from half filling the Mott transitions occurs at smaller U than for the half-filled system. We give a simple model for the doping dependence of the Mott transition.
- Received 21 May 1999
DOI:https://doi.org/10.1103/PhysRevB.60.15714
©1999 American Physical Society