Polarization dependence of the resonant Raman scattering from electrons in a spin-split subband of a III-V semiconductor quantum well

V. A. Froltsov, A. G. Mal’shukov, and K. A. Chao
Phys. Rev. B 60, 14255 – Published 15 November 1999
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Abstract

We have shown that the resonance Raman spectrum of electron spin-flip excitations in a lowest spin-split conduction subband in a semiconductor quantum well depends on the directions of circular polarization of the incident and the scattered lights. In the case of resonance with a heavy-hole subband, this dependence can be detected only if this heavy-hole subband hybridizes with light-hole subbands. However, for resonance with a light-hole subband, the result is not so sensitive to the mixing of heavy- and light-hole subbands. We also found that under extreme resonant conditions, the amplitude of scattered light from charge-density excitations mixes with that from spin-density excitations because of the spin-orbit coupling associated to the spin splitting of conduction subbands.

  • Received 1 March 1999

DOI:https://doi.org/10.1103/PhysRevB.60.14255

©1999 American Physical Society

Authors & Affiliations

V. A. Froltsov

  • Department of Theoretical Physics, Lund University, S-223 62 Lund, Sweden

A. G. Mal’shukov

  • Institute of Spectroscopy, Russian Academy of Sciences, 142092 Troitsk, Moscow Region, Russia

K. A. Chao

  • Department of Theoretical Physics, Lund University, S-223 62 Lund, Sweden

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Vol. 60, Iss. 20 — 15 November 1999

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