Amphoteric doping of single-wall carbon-nanotube thin films as probed by optical absorption spectroscopy

S. Kazaoui, N. Minami, R. Jacquemin, H. Kataura, and Y. Achiba
Phys. Rev. B 60, 13339 – Published 15 November 1999
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Abstract

We have separately probed the doping behavior of semiconducting (S) and metallic (M) single-wall carbon-nanotube (SWNT) films, by optical absorption and dc resistance (R) measurements. Either electron acceptors (Br2, I2) or donors (K, Cs) were used as dopants with controlled stoichiometry. Disappearance of absorption bands at 0.68, 1.2, and 1.8 eV, and concomitant decrease of R by doping have been attributed to electron depletion from or filling to specific bands in S- or M-SWNT’s, demonstrating their amphoteric doping behavior. Changes in the electronic properties are discussed in terms of the charge-transfer mechanism in the framework of the rigid-band model.

  • Received 21 May 1999

DOI:https://doi.org/10.1103/PhysRevB.60.13339

©1999 American Physical Society

Authors & Affiliations

S. Kazaoui*, N. Minami, and R. Jacquemin

  • National Institute of Materials and Chemical Research, AIST, MITI, 1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

H. Kataura and Y. Achiba

  • Faculty of Science, Tokyo Metropolitan University, 1-1 Minami-Ohsawa, Hachioji, Tokyo 192-0397, Japan

  • *Author to whom correspondence should be addressed. FAX: +81-298-54-6232. Electronic address: kazaoui@nimc.go.jp

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Vol. 60, Iss. 19 — 15 November 1999

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