Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well

D. R. Hang, Y. F. Chen, F. F. Fang, and W. I. Wang
Phys. Rev. B 60, 13318 – Published 15 November 1999
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Abstract

We present detailed studies of the persistent photoconductivity effect in In0.53Ga0.47As/In0.52Al0.48As quantum well, including wavelength, temperature, and time dependencies. We found conclusive results that show competition between the positive and negative persistent photoconductivity effects. We suggest that a complete understanding of the decay and buildup kinetics in the entire temperature region must incorporate both the positive and negative effects. We conclude that the major positive effect is due to the band-to-band electron-hole generation in the well layer followed by the spatial charge separation and the negative effect is related to the pumping of the two-dimensional electrons into the doped barrier layer followed by the decrease of mobility.

  • Received 7 December 1998

DOI:https://doi.org/10.1103/PhysRevB.60.13318

©1999 American Physical Society

Authors & Affiliations

D. R. Hang, Y. F. Chen, and F. F. Fang

  • Department of Physics, National Taiwan University, Taipei, Taiwan, 106 Republic of China

W. I. Wang

  • Department of Electrical Engineering, Columbia University, New York, New York 10027

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Vol. 60, Iss. 19 — 15 November 1999

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