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Spin energetics in a GaAs quantum well: Asymmetric spin-flip Raman scattering

D. Richards and B. Jusserand
Phys. Rev. B 59, R2506(R) – Published 15 January 1999
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Abstract

We demonstrate an asymmetric dependence of the spin-flip electronic Raman spectrum from a two-dimensional electron gas on the direction of circular polarization of the photons, resulting from an interference of light scattered from longitudinal and transverse spin-density fluctuations. By exploiting these selection rules, we are able to determine experimentally that the sign of the band-structure parameter a42, which describes the bulk k3 conduction-band spin splitting in zinc-blende semiconductors, is negative for GaAs.

  • Received 9 July 1998

DOI:https://doi.org/10.1103/PhysRevB.59.R2506

©1999 American Physical Society

Authors & Affiliations

D. Richards

  • Cavendish Laboratory, Madingley Road, Cambridge CB3 0HE, United Kingdom

B. Jusserand

  • France Télécom, CNET/DTD, Laboratoire de Bagneux, 196 Avenue Henri Ravera, F-92220 Bagneux, France

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Vol. 59, Iss. 4 — 15 January 1999

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