Direct evidence of C60 chemical bonding on Si(100)

M. De Seta, D. Sanvitto, and F. Evangelisti
Phys. Rev. B 59, 9878 – Published 15 April 1999
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Abstract

The deposition of C60 on Si(100):H2×1 surface was investigated as a function of substrate temperature in the range RT-800 °C by means of photoemission spectroscopies. In this range, the interaction of C60 molecules with both the hydrogenated and the bare Si(100)2×1 surface could be studied and followed until the temperature was high enough to cause the fragmentation of C60 cage and the formation of SiC layers. It is found that the fullerene molecules physisorb on the hydrogenated surface but form a covalent bond on the clean surface. The transition from physisorption to chemisorption entails the appearance of a new peak in the ultraviolet photoemission spectroscopy spectra intermediate between that of the HOMO (highest occupied molecular orbital) and HOMO-1 bands.

  • Received 5 October 1998

DOI:https://doi.org/10.1103/PhysRevB.59.9878

©1999 American Physical Society

Authors & Affiliations

M. De Seta, D. Sanvitto, and F. Evangelisti

  • Unitá INFM, Dipartimento di Fisica “E. Amaldi,” Universitá degli Studi di Roma Tre, Via della Vasca Navale, 84, I-00146 Rome, Italy

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Vol. 59, Iss. 15 — 15 April 1999

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