Interlayer coupling in ferromagnetic semiconductor superlattices

T. Jungwirth, W. A. Atkinson, B. H. Lee, and A. H. MacDonald
Phys. Rev. B 59, 9818 – Published 15 April 1999
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Abstract

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard Ruderman-Kittel-Kesuya-Yosida model allowing spatial inhomogeneity of the system, free-carrier spin polarization, finite temperature, and free-carrier exchange and correlation to be accounted for self-consistently. As an example, we calculate the electronic structure of a MnxGa1xAs/GaAs superlattice with alternating ferromagnetic and paramagnetic layers and demonstrate the possibility of semiconductor magnetoresistance systems with designed properties.

  • Received 20 January 1999

DOI:https://doi.org/10.1103/PhysRevB.59.9818

©1999 American Physical Society

Authors & Affiliations

T. Jungwirth

  • Department of Physics, Indiana University, Bloomington, Indiana 47405
  • Institute of Physics ASCR, Cukrovarnická 10, 162 00 Praha 6, Czech Republic

W. A. Atkinson, B. H. Lee, and A. H. MacDonald

  • Department of Physics, Indiana University, Bloomington, Indiana 47405

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Vol. 59, Iss. 15 — 15 April 1999

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