Temperature dependence of the optical properties of ${\mathrm{I}\mathrm{n}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_y{\mathrm{Ga}}_{1-y}\mathrm{As}$ self-organized quantum dots

The photoluminescence properties of ${\mathrm{I}\mathrm{n}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_y{\mathrm{Ga}}_{1-y}\mathrm{As}$ self-assembled quantum dots are studied as a function of temperature from 10 to 290 K. By varying the Al content the dot luminescence can be tuned over a wavelength range from 0.8 to 1.1 μm, and can be made thermally stable up to room temperature. The temperature dependence of carrier hopping between dots is discussed in terms of the depth of the dot confinement potential and the dispersion in dot size and composition.