Effect of disorder on the temperature dependence of radiative lifetimes in V-groove quantum wires

D. Y. Oberli, M.-A. Dupertuis, F. Reinhardt, and E. Kapon
Phys. Rev. B 59, 2910 – Published 15 January 1999
PDFExport Citation

Abstract

We have studied the effect of disorder on the radiative properties of semiconductor quantum wires by time-resolved photoluminescence spectroscopy. The dependence of the radiative lifetimes is measured over a temperature range extending from 8 to 150 K. At low temperatures we find that the measured dependence does not conform to the theoretical prediction for recombination of free excitons in a quasi-one-dimensional system due to the major influence of disorder. An extension of the theory is developed in order to take into account exciton ionization and the contribution of free carriers. A mean localization length for excitons is also estimated from the radiative lifetime at 8 K.

  • Received 26 June 1998

DOI:https://doi.org/10.1103/PhysRevB.59.2910

©1999 American Physical Society

Authors & Affiliations

D. Y. Oberli*, M.-A. Dupertuis, F. Reinhardt, and E. Kapon

  • Départment de Physique, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

  • *Electronic address: Daniel.Oberli@epfl.ch
  • Present address: Lucent Technologies, Microelectronics, Reading, PA 19612.

References (Subscription Required)

Click to Expand
Issue

Vol. 59, Iss. 4 — 15 January 1999

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×