Well-width dependence of exciton-phonon scattering in InxGa1xAs/GaAs single quantum wells

P. Borri, W. Langbein, J. M. Hvam, and F. Martelli
Phys. Rev. B 59, 2215 – Published 15 January 1999
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Abstract

The temperature and density dependencies of the exciton dephasing time in In0.18Ga0.82As/GaAs single quantum wells with different thicknesses have been measured by degenerate four-wave mixing. The exciton-phonon scattering contribution to the dephasing is isolated by extrapolating the dephasing rate to zero-exciton density. From the temperature dependence of this rate we have deduced the linewidth broadening coefficients for acoustic and optical phonons. We find acoustic-phonon coefficients that increase from 1.6 to 3 μeV/K when increasing the well width from 1 to 4 nm. This is in quantitative agreement with theoretical predictions when the spatial extension of the exciton wave function, strongly penetrating into the GaAs barrier in thin InxGa1xAs quantum wells, is taken into account. The optical-phonon coefficient does not show a systematic dependence on well thickness, and is comparable with the value for bulk GaAs.

  • Received 29 April 1998

DOI:https://doi.org/10.1103/PhysRevB.59.2215

©1999 American Physical Society

Authors & Affiliations

P. Borri, W. Langbein, and J. M. Hvam

  • Mikroelektronik Centret, The Technical University of Denmark, Building 345 east, DK-2800 Lyngby, Denmark

F. Martelli

  • Fondazione Ugo Bordoni, via B. Castiglione 59, I-00142 Roma, Italy

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Issue

Vol. 59, Iss. 3 — 15 January 1999

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