Size effect on chalcogen deep levels in Si quantum dots

Jian Song; Shang Yuan Ren; John D. Dow

doi:10.1103/PhysRevB.59.2045

Size effect on chalcogen deep levels in Si quantum dots

Jian Song, Shang Yuan Ren, and John D. Dow

Phys. Rev. B 59, 2045 – Published 15 January 1999

Abstract

The deep levels and electron spin resonance spectra associated with S, Se, and Te impurities at the centers of Si quantum dots are predicted as functions of dot size, for both the neutral and singly ionized states.

Received 1 December 1997

DOI:https://doi.org/10.1103/PhysRevB.59.2045

Authors & Affiliations

Jian Song

Department of Physics, Peking University, Beijing 100871, China

Shang Yuan Ren^*

Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
Department of Physics, Peking University, Beijing 100871, China

John D. Dow