Electronic structure of 1TTiS2

Sangeeta Sharma, Tashi Nautiyal, G. S. Singh, S. Auluck, P. Blaha, and Claudia Ambrosch-Draxl
Phys. Rev. B 59, 14833 – Published 15 June 1999
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Abstract

We present state-of-the-art band-structure calculations for the 1T phase of TiS2. We have used the full-potential linear augmented-plane-wave method as embodied in the WIEN97 code. Our calculations show that 1TTiS2 is semimetallic at ambient pressure in agreement with the recent calculations based on the augmented spherical wave (ASW) and the linear-muffin-tin-orbital methods but in disagreement with the more recent pseudopotential calculations. In order to ascertain the effect of lattice parameters on the band structure, we have performed calculations for lattice parameters corresponding to hydrostatic pressures up to 7.6 GPa. Our calculations show that 1TTiS2 remains semimetallic at these pressures. Calculations are also performed for the slab geometry to ascertain whether the band overlap decreases with increasing distance between the TiS2 layers making it a semiconductor as revealed by the ASW calculations. We find that 1TTiS2 is semimetallic in the slab geometry, too.

  • Received 23 November 1998

DOI:https://doi.org/10.1103/PhysRevB.59.14833

©1999 American Physical Society

Authors & Affiliations

Sangeeta Sharma, Tashi Nautiyal, G. S. Singh, and S. Auluck

  • Department of Physics, University of Roorkee, Roorkee (U.P.) 247 667, India

P. Blaha

  • Institut für Technische Elektrochemie, Technische Universität Wien, A-1020 Wien, Austria

Claudia Ambrosch-Draxl

  • Institut für Theoretische Physik, University of Graz, A-8010 Graz, Austria

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Vol. 59, Iss. 23 — 15 June 1999

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