Shape and dielectric mismatch effects in semiconductor quantum dots

P. G. Bolcatto and C. R. Proetto
Phys. Rev. B 59, 12487 – Published 15 May 1999
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Abstract

The combined effect of shape and dielectric mismatch between dot and matrix on several electronic properties of semiconductor quantum dots have been studied. In particular, the electronic properties of spherical and cubic quantum dots that have been analyzed are the integrated density of states, the polarization self-energy corrections to single-particle energies, the doping with impurities, excitonic Coulomb energies, and Coulomb blockade energies. It has been found that, in spite of the highly nonhomogeneous polarized charge density induced at the boundaries of the cubic quantum dot, the electronic properties are essentially independent on the dot shape for all the range of dielectric mismatch.

  • Received 22 June 1998

DOI:https://doi.org/10.1103/PhysRevB.59.12487

©1999 American Physical Society

Authors & Affiliations

P. G. Bolcatto* and C. R. Proetto

  • Comisión Nacional de Energía Atómica, Centro Atómico Bariloche and Instituto Balseiro, 8400 Bariloche, Argentina

  • *Permanent address: Facultad de Formación Docente en Ciencias y Facultad de Ingeniería Química, Universidad Nacional del Litoral (UNL), Santiago del Estero 2829, 3000 Santa Fe, Argentina.

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Vol. 59, Iss. 19 — 15 May 1999

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