Electronic structure and optical properties of ultrathin CdS/ZnS quantum wells grown by molecular-beam epitaxy

M. Hetterich, Ch. Märkle, A. Dinger, M. Grün, and C. Klingshirn
Phys. Rev. B 59, 10268 – Published 15 April 1999
PDFExport Citation

Abstract

We investigate in detail the optical properties of ultrathin, highly strained, cubic CdS/ZnS single and multiple quantum well structures using mainly photoluminescence, photoluminescence-excitation, and absorption spectroscopy. An effective model within the envelope function approximation is presented, taking into account strain and excitonic effects. Using an improved parameter set for cubic CdS this model successfully describes the observed exciton transition energies. A fit to experimental data taking into account the Stokes shift between luminescence and absorption yields some information about the model parameters, namely, the CdS/ZnS band alignment and the tetragonal deformation potential of CdS in the zinc-blende modification. Finally, we investigate the influence of localization effects due to well width fluctuations on the dimensionality of exciton confinement. A strong enhancement of the excitonic exchange interaction is found for deeply localized states in extremely narrow quantum wells, suggesting a significant lateral confinement and the formation of quasi-zero-dimensional states.

  • Received 20 July 1998

DOI:https://doi.org/10.1103/PhysRevB.59.10268

©1999 American Physical Society

Authors & Affiliations

M. Hetterich, Ch. Märkle, A. Dinger, M. Grün, and C. Klingshirn

  • Institut für Angewandte Physik der Universität Karlsruhe, Kaiserstraße 12, D-76128 Karlsruhe, Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 59, Iss. 15 — 15 April 1999

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×