Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells

B. Gil, P. Lefebvre, J. Allègre, H. Mathieu, N. Grandjean, M. Leroux, J. Massies, P. Bigenwald, and P. Christol
Phys. Rev. B 59, 10246 – Published 15 April 1999
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Abstract

The 2-K recombination dynamics of coupled GaN-AlGaN multiple quantum wells reveals a composite nature in terms of the joint contributions of short-lived direct excitons and long-lived oblique ones. The possibility to observe these oblique excitons, which produce a unusual blueshift of the photoluminescence at long decay times is found to be in straightforward correlation with the presence of internal electric fields together with the existence of a slight disorder at the monolayer scale.

  • Received 17 August 1998

DOI:https://doi.org/10.1103/PhysRevB.59.10246

©1999 American Physical Society

Authors & Affiliations

B. Gil, P. Lefebvre, J. Allègre, and H. Mathieu

  • CNRS, Groupe d’Etude des Semiconducteurs, Université de Montpellier II, Case Courrier 074, 34095 Montpellier Cedex 5, France

N. Grandjean, M. Leroux, and J. Massies

  • CNRS, Centre de Recherche sur l’ Hétéro-Epitaxie et ses Applications, Rue B. Grégory, 06560 Valbonne, France

P. Bigenwald and P. Christol

  • Laboratoire de Physique des Matériaux, Université d’ Avignon, 33 Rue Louis Pasteur, 84000 Avignon, France

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Vol. 59, Iss. 15 — 15 April 1999

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