Abstract
We present zero magnetic-field resistivity measurements of the variable-range hopping (VRH) in a two-dimensional electron gas created at a δ-doped heterostructure. When either the temperature or carrier density are reduced the longitudinal resistivity shows a crossover from two-dimensional Mott VRH, to Efros-Shklovskii (ES) Coulomb-gap behavior In both regimes, near the crossover, the data collapse onto universal curves with a temperature independent prefactor or The latter result is in close agreement with measurements of Si metal-oxide-semiconductor field-effect transistors. We discuss the possible implications of our data on the theory of phonon-assisted VRH.
- Received 23 April 1998
DOI:https://doi.org/10.1103/PhysRevB.59.4580
©1999 American Physical Society