Abstract
High-resolution electron microscopy, on-zone bright-field imaging, and image simulation were used to investigate the shape of capped semiconductor quantum dots. Cross-section 〈110〉 high-resolution images suggest that the quantum dots are lens shaped, while the [001] on-zone bright-field images show a contrast that suggests a quantum dot morphology with four edges parallel to 〈100〉. The image simulation, however, suggests that a spherical quantum dot can produce a square-shaped image. These observations lead to the conclusion that the quantum dots in buried semiconductor heterostructures are lens shaped.
- Received 27 April 1998
DOI:https://doi.org/10.1103/PhysRevB.58.R4235
©1998 American Physical Society