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Optically detected magnetic resonance of excess electrons in type-I quantum wells with a low-density electron gas

C. Y. Hu, W. Ossau, D. R. Yakovlev, G. Landwehr, T. Wojtowicz, G. Karczewski, and J. Kossut
Phys. Rev. B 58, R1766(R) – Published 15 July 1998
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Abstract

Optically detected magnetic resonance is applied to study the fast optical transition processes on a ns time scale with the microwave-induced magnetic transition rate much lower than the optical transition rate. The spin resonance of excess electrons (EESR) is observed with the detection on either the direct exciton or the negatively charged exciton X emission in type-I CdTe/Cd1xMgxTe quantum wells with excess electrons of low density. It is found that the electron-spin-dependent and electron-spin-conserved formation and recombination of X make the optical detection of EESR feasible.

  • Received 22 April 1998

DOI:https://doi.org/10.1103/PhysRevB.58.R1766

©1998 American Physical Society

Authors & Affiliations

C. Y. Hu*, W. Ossau, D. R. Yakovlev, and G. Landwehr

  • Physikalisches Institut der Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

T. Wojtowicz, G. Karczewski, and J. Kossut

  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

  • *On leave from Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China.
  • On leave from A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia.

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Vol. 58, Iss. 4 — 15 July 1998

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