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Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupled In0.045Ga0.955As/GaAs double quantum wells

T. Wang, M. Bayer, and A. Forchel
Phys. Rev. B 58, R10183(R) – Published 15 October 1998
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Abstract

The spin splitting of the parity-forbidden transition hh12 and ground-state transition hh11 in a coupled In0.045Ga0.955As/GaAs double quantum well is investigated by photoluminescence (PL) and PL excitation spectroscopy in magnetic fields up to 13 T. Our experiment indicated that the spin splitting of hh12 is reversed compared with that of hh11 and is larger than that of hh11. We report that the spin splitting of hh12 increases with the decrease of GaAs thickness separating the quantum wells. The hh12 behavior is confirmed to be due to the strong mixing of the p exciton of hh12 and the s exciton of the light hole.

  • Received 6 July 1998

DOI:https://doi.org/10.1103/PhysRevB.58.R10183

©1998 American Physical Society

Authors & Affiliations

T. Wang*, M. Bayer, and A. Forchel

  • Technische Physik, Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany

  • *Author to whom correspondence should be addressed. Corresponding address: Sakai Laboratory, Department of Electrical and Electronic Engineering, University of Tokushima, Tokushima, 770 Japan.

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Issue

Vol. 58, Iss. 16 — 15 October 1998

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