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Optical polarization relaxation in InxGa1xAs-based quantum wells: Evidence of the interface symmetry-reduction effect

T. Guettler, A. L. C. Triques, L. Vervoort, R. Ferreira, Ph. Roussignol, P. Voisin, D. Rondi, and J. C. Harmand
Phys. Rev. B 58, R10179(R) – Published 15 October 1998
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Abstract

We report on the measurement of the spin dynamics in InxGa1xAsAlxIn1xAs and InxGa1xAsInP multiquantum wells, using a fs pump and probe experiment. We observe a large difference in the polarization relaxation times, which confirms the recently predicted role of the interface symmetry reduction.

  • Received 11 May 1998

DOI:https://doi.org/10.1103/PhysRevB.58.R10179

©1998 American Physical Society

Authors & Affiliations

T. Guettler, A. L. C. Triques, L. Vervoort, R. Ferreira, Ph. Roussignol, and P. Voisin

  • Laboratoire de Physique de la Matière Condensée de l’Ecole Normale Supérieure, 24 rue Lhomond, F75005 Paris, France

D. Rondi

  • Laboratoire Central de Recherche, Thomson CSF, Domaine de Corbeville, F91400, Orsay, France

J. C. Harmand

  • France-Telecom-Centre National d’Etude des Télécommunications, 196 Avenue Henri Ravera, F92220 Bagneux, France

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Issue

Vol. 58, Iss. 16 — 15 October 1998

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