Interface roughness localization in quantum wells and quantum wires

We studied the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. We measured the magnetoluminescence at different temperatures and analyzed the results with a model where the average microroughness, the magnetic field, and the excitonic effects are treated within the same level of approximation. We were able to extract a quantitative estimate for the exciton localization due to microroughness. Our results also demonstrate the efficiency of the temperature to detrap excitons from the interface roughness localization.