Scanning tunneling microscopy of the 7×7 to 3×1 transformation induced on the Si(111) surface by Na adsorption

A. A. Saranin, A. V. Zotov, S. V. Ryzhkov, D. A. Tsukanov, V. G. Lifshits, J.-T. Ryu, O. Kubo, H. Tani, T. Harada, M. Katayama, and K. Oura
Phys. Rev. B 58, 7059 – Published 15 September 1998
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Abstract

Using scanning tunneling microscopy (STM), the process of the Si(111)3×1Na phase formation induced by Na adsorption on the Si(111)7×7 samples with a terrace width of 3000–6000 Å has been studied. The STM monitoring of the successive stages of the 7×7 to 3×1 transformation enables us to elucidate its main regularities. The redistribution of Si atoms in a top Si(111) layer has been found to play a critical role in the Si(111)3×1Na growth mode. As a result of the Si redistribution, initially flat Si(111)7×7 terrace converts into the two-level system of the 3×1Na islands on the 3×1Na terrace. From the quantitative consideration of the Si mass transport balance, the top Si atom density of the Si(111)3×1Na phase has been determined to be 4/3 monolayer.

  • Received 16 March 1998

DOI:https://doi.org/10.1103/PhysRevB.58.7059

©1998 American Physical Society

Authors & Affiliations

A. A. Saranin

  • Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
  • Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia;
  • Faculty of Physics and Engineering, Far Eastern State University, 690000 Vladivostok, Russia

A. V. Zotov

  • Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
  • Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia;
  • Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia

S. V. Ryzhkov and D. A. Tsukanov

  • Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia

V. G. Lifshits

  • Institute of Automation and Control Processes, 5 Radio Street, 690041 Vladivostok, Russia;
  • Faculty of Physics and Engineering, Far Eastern State University, 690000 Vladivostok, Russia;
  • Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia

J.-T. Ryu, O. Kubo, H. Tani, T. Harada, M. Katayama, and K. Oura*

  • Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan

  • *Author to whom correspondence should be addressed. Fax: +81 6 876 4564. Electronic address: oura@ele.eng.osaka-u.ac.jp

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Issue

Vol. 58, Iss. 11 — 15 September 1998

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