Elastic relaxation of dry-etched Si/SiGe quantum dots

A. A. Darhuber, T. Grill, J. Stangl, G. Bauer, D. J. Lockwood, J.-P. Noël, P. D. Wang, and C. M. Sotomayor Torres
Phys. Rev. B 58, 4825 – Published 15 August 1998
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Abstract

Elastic relaxation of the compressive strain due to the lattice mismatch between SiGe and Si has been studied with both x-ray diffraction and Raman scattering in small (30–100 nm) dry-etched Si/SiGe quantum dots fabricated from high-quality multilayers grown on (001)-oriented Si. The Raman spectroscopic investigations showed that the dot alloy layers have relaxed by approximately 65% from their fully strained value and that a compensating tensile strain has been induced in the Si layers. The relaxation is essentially independent of the dot size and the values derived experimentally compare well with analytical and numerical model calculations.

  • Received 2 March 1998

DOI:https://doi.org/10.1103/PhysRevB.58.4825

©1998 American Physical Society

Authors & Affiliations

A. A. Darhuber, T. Grill, J. Stangl, and G. Bauer

  • Institut für Halbleiterphysik, Universität Linz, Altenbergerstraße 69, A-4040 Linz, Austria

D. J. Lockwood and J.-P. Noël

  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A OR6

P. D. Wang* and C. M. Sotomayor Torres

  • Nanoelectronics Research Center, University of Glasgow, Glasgow, United Kingdom

  • *Present address: CoreTek, Inc., 25 B Street, Burlington, MA 01803.
  • Present address: Lehrstuhl für Materialwissenschaften in der Elektrotechnik, Bergische Universität GH Wuppertal, D-42097 Wuppertal, Germany.

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Issue

Vol. 58, Iss. 8 — 15 August 1998

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