Many-body effects in highly acceptor-doped GaAs/AlxGa1xAs quantum wells

P. O. Holtz, A. C. Ferreira, B. E. Sernelius, A. Buyanov, B. Monemar, O. Mauritz, U. Ekenberg, M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard
Phys. Rev. B 58, 4624 – Published 15 August 1998
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Abstract

The optical properties of quantum wells, which are center-doped with acceptors up to the high doping regime, 1×1019cm3, have been studied by means of photoluminescence and photoluminescence excitation spectroscopy. The experimental results derived from the optical measurements are compared with theoretical predictions on the self-energy shifts of the subbands at high doping levels performed with self-consistent Hartree calculations with the inclusion of many-body effects.

  • Received 12 November 1997

DOI:https://doi.org/10.1103/PhysRevB.58.4624

©1998 American Physical Society

Authors & Affiliations

P. O. Holtz, A. C. Ferreira, B. E. Sernelius, A. Buyanov, and B. Monemar

  • Department of Physics and Measurements Technology, Linköping University, S-581 83 Linköping, Sweden

O. Mauritz and U. Ekenberg

  • Department of Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

M. Sundaram, K. Campman, J. L. Merz, and A. C. Gossard

  • Center for Quantized Electronic Structures (QUEST), University of California at Santa Barbara, Santa Barbara, California 93016

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Vol. 58, Iss. 8 — 15 August 1998

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