Photoluminescence of charged InAs self-assembled quantum dots

K. H. Schmidt, G. Medeiros-Ribeiro, and P. M. Petroff
Phys. Rev. B 58, 3597 – Published 15 August 1998
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Abstract

We have used capacitance and photoluminescence spectroscopy to study the optical properties of charged InAs self-assembled quantum dots. When the dots are loaded with electrons, the ground-state transition in the photoluminescence spectra shows a redshift of about 15 meV accompanied by a decrease in intensity and a broadening. In addition, an excited-state transition appears. All the observations mentioned above are attributed to many-body effects caused by charging of the quantum dots with electrons. The observed changes of the photoluminescence signal are also discussed in terms of field effects.

  • Received 20 January 1998

DOI:https://doi.org/10.1103/PhysRevB.58.3597

©1998 American Physical Society

Authors & Affiliations

K. H. Schmidt

  • Lehrstuhl für Werkstoffe der Elektrotechnik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

G. Medeiros-Ribeiro

  • Hewlett Packard Company, 3500 Deer Creek Road, Building 26, Palo Alto, California 94304-1392

P. M. Petroff

  • Materials Department, University of California, Santa Barbara, California 93106

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Vol. 58, Iss. 7 — 15 August 1998

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