Abstract
The electronic structure of an InAs self-assembled quantum dot in the presence of a perpendicular magnetic field is investigated theoretically. The effect of finite offset, valence-band mixing, and strain are taken into account. The hole levels show strong anticrossings. The large strain and strong magnetic field decrease the effect of mixing between heavy hole and light hole. The hole energy levels have in general a weaker field dependence compared with the corresponding uncoupled levels.
- Received 14 October 1997
DOI:https://doi.org/10.1103/PhysRevB.58.3561
©1998 American Physical Society