Electron g factor in one- and zero-dimensional semiconductor nanostructures

A. A. Kiselev, E. L. Ivchenko, and U. Rössler
Phys. Rev. B 58, 16353 – Published 15 December 1998
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Abstract

We investigate theoretically the Zeeman effect on the lowest confined electron in quantum wires and quantum dots. A general relation is established between the symmetry of a low-dimensional system and properties of the electron g factor tensor, gαβ. The powerful method used earlier to calculate the transverse g factor in quantum wells is extended to one-dimensional (1D) and 0D zinc-blende-based nanostructures and analytical expressions are derived in the frame of Kane’s model for the g factors in quantum wells, cylindrical wires, and spherical dots. The role of dimensionality is illustrated on two particular heteropairs, GaAs/AlxGa1xAs and Ga1xInxAs/InP. The efficiency of the developed theoretical concept is demonstrated by calculating the three principal values of the g factor tensor in rectangular quantum wires in dependence on the wire width to establish also the connection with the 2D case.

  • Received 20 July 1998

DOI:https://doi.org/10.1103/PhysRevB.58.16353

©1998 American Physical Society

Authors & Affiliations

A. A. Kiselev and E. L. Ivchenko

  • A. F. Ioffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia

U. Rössler

  • Institut für Theoretische Physik, Universität Regensburg D-93040 Regensburg, Germany

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Issue

Vol. 58, Iss. 24 — 15 December 1998

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