Spin splitting in the electron subband of asymmetric GaAs/AlxGa1xAs quantum wells: The multiband envelope function approach

L. Wissinger, U. Rössler, R. Winkler, B. Jusserand, and D. Richards
Phys. Rev. B 58, 15375 – Published 15 December 1998
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Abstract

The dependence on carrier concentration of the anisotropic spin splitting of the lowest electron subband in asymmetrically doped GaAs/AlxGa1xAs quantum wells is determined. We employ the multiband envelope function approach based on 8×8 and 14×14kp Hamiltonians. Our self-consistent calculations yield results in quantitative agreement with experimental data obtained from inelastic light scattering.

  • Received 13 July 1998

DOI:https://doi.org/10.1103/PhysRevB.58.15375

©1998 American Physical Society

Authors & Affiliations

L. Wissinger and U. Rössler

  • Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany

R. Winkler

  • Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany
  • Institut für Technische Physik, Universität Erlangen-Nürnberg, Staudtstrasse 7, D-91058 Erlangen, Germany

B. Jusserand

  • France Télécom, CNET/PAB, Laboratoire de Bagneux, 196 Avenue Henri Ravera, F-92220 Bagneux, France

D. Richards

  • Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom

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Issue

Vol. 58, Iss. 23 — 15 December 1998

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