Charge density of semiconductors in the GW approximation

Martin M. Rieger and R. W. Godby
Phys. Rev. B 58, 1343 – Published 15 July 1998
PDFExport Citation

Abstract

We present a method to calculate the electronic charge density of periodic solids in the GW approximation, using the space-time approach. We investigate, for the examples of silicon and germanium, to what extent the GW approximation is charge conserving and how the charge density compares with experimental values. We find that the GW charge density is close to experiment and charge is practically conserved. We also discuss how using a Hartree potential consistent with the level of approximation affects the quasiparticle energies and find that the common simplification of using the local-density approximation Hartree potential is very well justified.

  • Received 15 December 1997

DOI:https://doi.org/10.1103/PhysRevB.58.1343

©1998 American Physical Society

Authors & Affiliations

Martin M. Rieger

  • Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom

R. W. Godby

  • Department of Physics, University of York, Heslington, York YO1 5DD, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 58, Iss. 3 — 15 July 1998

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×