Resonant Raman scattering in InP/In0.48Ga0.52P quantum dot structures embedded in a waveguide

A. A. Sirenko, M. K. Zundel, T. Ruf, K. Eberl, and M. Cardona
Phys. Rev. B 58, 12633 – Published 15 November 1998
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Abstract

We report on Raman scattering in nanostructures with InP quantum dots in an In0.48Ga0.52P matrix embedded in an In0.48Al0.52P waveguide. At resonant excitation with the quantum dot excitons, broad Raman peaks corresponding to acoustic and optical vibrations were observed. Their polarization was studied for in-plane propagation of the exciting and scattered light in forward scattering geometry. In comparison with the conventional backscattering configuration, the Raman signals are drastically enhanced due to the increased scattering volume.

  • Received 13 July 1998

DOI:https://doi.org/10.1103/PhysRevB.58.12633

©1998 American Physical Society

Authors & Affiliations

A. A. Sirenko

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany
  • Pennsylvania State University, 104 Davey Laboratory, University Park, Pennsylvania 16802

M. K. Zundel, T. Ruf, K. Eberl, and M. Cardona

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany

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Vol. 58, Iss. 19 — 15 November 1998

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