Abstract
Local-density-functional methods are used to examine the behavior of the oxygen defect, gallium vacancy, and related defect complexes trapped at threading-edge dislocations in GaN. These defects are found to be particularly stable at the core of the dislocation where oxygen sits twofold coordinated in a bridge position. is found to be a deep double acceptor, is a deep single acceptor, and at the dislocation core is electrically inactive. We suggest that the first two defects are responsible for a deep acceptor level associated with the midgap yellow luminescence band.
- Received 15 June 1998
DOI:https://doi.org/10.1103/PhysRevB.58.12571
©1998 American Physical Society