Exciton binding energies in polar quantum wells with finite potential barriers

Ruisheng Zheng and Mitsuru Matsuura
Phys. Rev. B 58, 10769 – Published 15 October 1998
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Abstract

A theoretical method for studying the properties of 1s and 2s excitons in polar quantum wells with finite potential barriers is presented. Exciton–optical-phonon interaction together with an image-charge effect and discontinuity of the band masses are included in the theory. Exciton binding energies and exciton–LO-phonon interaction energies of GaAs/Ga1xAlxAs and Zn1xCdxSe/ZnSe quantum wells are calculated numerically. Our theory gives correct results throughout the entire well-width range of the finite-barrier quantum wells. The properties of the 1s and 2s excitons are found very different in quantum wells. The theoretical results of the energy difference between 1s and 2s exciton states of heavy-hole excitons in these quantum-well structures are compared with the experimental data directly. The property of the excitons in polar quantum wells are discussed in the present paper.

  • Received 3 February 1998

DOI:https://doi.org/10.1103/PhysRevB.58.10769

©1998 American Physical Society

Authors & Affiliations

Ruisheng Zheng

  • Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, Ube 755, Japan
  • Physics Department, Inner Mongolia University, Hohhot 010021, China

Mitsuru Matsuura

  • Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, Ube 755, Japan

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Issue

Vol. 58, Iss. 16 — 15 October 1998

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