Electronic states in strained cleaved-edge-overgrowth quantum wires and quantum dots

M. Grundmann, O. Stier, and D. Bimberg
Phys. Rev. B 58, 10557 – Published 15 October 1998
PDFExport Citation

Abstract

The electronic properties of cleaved-edge-overgrowth (CEO) strained T-shaped quantum wires and twofold CEO quantum dots are calculated in the presence of strain induced by lattice mismatch. Potential modifications of growth morphology due to strain are discussed. The anisotropy of the elastic constants causes the band edges in (001) and (110)-oriented layers to be different. Using effective-mass theory, we find electrons to be localized in asymmetric strained T-shaped quantum wires, whereas holes are repelled. Coulomb interaction can induce localization of excitons. For twofold CEO quantum dots, bound states are expected only when (compressive) strain effects are small. In our calculation image charge effects are properly taken into account. Numerical examples are presented for the In0.2Ga0.8As/GaAs system.

  • Received 11 March 1998

DOI:https://doi.org/10.1103/PhysRevB.58.10557

©1998 American Physical Society

Authors & Affiliations

M. Grundmann, O. Stier, and D. Bimberg

  • Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 58, Iss. 16 — 15 October 1998

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×