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Energetics of quantum antidot states in the quantum Hall regime

I. J. Maasilta and V. J. Goldman
Phys. Rev. B 57, R4273(R) – Published 15 February 1998
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Abstract

We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity.

  • Received 25 August 1997

DOI:https://doi.org/10.1103/PhysRevB.57.R4273

©1998 American Physical Society

Authors & Affiliations

I. J. Maasilta and V. J. Goldman

  • Department of Physics, State University of New York, Stony Brook, New York 11794-3800

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Vol. 57, Iss. 8 — 15 February 1998

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