Abstract
We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity.
- Received 25 August 1997
DOI:https://doi.org/10.1103/PhysRevB.57.R4273
©1998 American Physical Society