Optical properties of Ge self-organized quantum dots in Si

C. S. Peng, Q. Huang, W. Q. Cheng, J. M. Zhou, Y. H. Zhang, T. T. Sheng, and C. H. Tung
Phys. Rev. B 57, 8805 – Published 15 April 1998
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Abstract

Small-size, high-density, and vertical-ordering Ge quantum dots are observed in strained Si/Ge short-period superlattices grown on Si(001) at low growth temperature by molecular-beam epitaxy. The photoluminescence (PL) peak position, the strong PL at room temperature, and the high exciton binding energy suggest an indirect-to-direct conversion of the Ge quantum dots. This conversion is in good agreement with the theoretical prediction. The characteristic of absorption directly indicates this conversion. The tunneling of carriers between these quantum dots is also observed.

  • Received 6 November 1997

DOI:https://doi.org/10.1103/PhysRevB.57.8805

©1998 American Physical Society

Authors & Affiliations

C. S. Peng*, Q. Huang, W. Q. Cheng, and J. M. Zhou

  • Institute of Physics and Center of Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603(36), Beijing 100080, People’s Republic of China

Y. H. Zhang

  • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China

T. T. Sheng and C. H. Tung

  • Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 0511

  • *Electronic address: cspeng@aphy02.iphy.ac.cn

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Vol. 57, Iss. 15 — 15 April 1998

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