Abstract
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain-dependent Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single-particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four, and six bands, and with results from a one-band approximation in which is determined by the local value of the strain. The eight-band model predicts a lower ground-state energy and a larger number of excited states than the other approximations.
- Received 28 October 1997
DOI:https://doi.org/10.1103/PhysRevB.57.7190
©1998 American Physical Society