Exciton dephasing in ZnSe quantum wires

H. P. Wagner, W. Langbein, J. M. Hvam, G. Bacher, T. Kümmell, and A. Forchel
Phys. Rev. B 57, 1797 – Published 15 January 1998
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Abstract

The homogeneous linewidths of excitons in wet-etched ZnSe quantum wires of lateral sizes down to 23 nm are studied by transient four-wave mixing. The low-density dephasing time is found to increase with decreasing wire width. This is attributed mainly to a reduction of electron-exciton scattering within the wire due to the electron trapping in surface states and exciton localization. The exciton-exciton scattering efficiency, determined by the density dependence of the exciton dephasing, is found to increase with decreasing wire width. This is assigned to the reduced phase space in a quasi-one-dimensional system, enhancing the repulsive interaction between excitons due to Pauli blocking.

  • Received 10 July 1997

DOI:https://doi.org/10.1103/PhysRevB.57.1797

©1998 American Physical Society

Authors & Affiliations

H. P. Wagner

  • Universität Regensburg, Institut Physik II, D-93040 Regensburg, Germany

W. Langbein and J. M. Hvam

  • Mikroelektronik Centret, The Technical University of Denmark, 2800 Lyngby, Denmark

G. Bacher, T. Kümmell, and A. Forchel

  • Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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Issue

Vol. 57, Iss. 3 — 15 January 1998

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