Electron–optical-phonon interaction effect on the intradonor transition energies in doped ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}-\mathrm{A}\mathrm{l}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$ quantum wells

We report a calculation of $1\overrightarrow{s}{2p}_{+}$ transition energies of a donor impurity magnetopolaron located in GaAs quantum wells in the presence of an external magnetic field. The impurity levels are obtained through a variational method by choosing a Gaussian trial wave function with only one variational parameter. Our theoretical results can account for the experimental data for the center-donor system when the approximation of a single well is used. We also found no evidence for the presence of electron–nonbulk-phonon interaction needed to understand this problem.