Abstract
Inhomogeneous strain relaxation in quantum dots etched from biaxially strained quantum wells is calculated. Strain-induced band effects and piezoelectric potentials are discussed for several wires and dots (mainly II-VI systems, but results are generalized to other zinc-blende systems such as . General trends for varying design parameters of the nanostructures are given. Results are compared to data obtained from optical spectroscopy experiments. The case of a system under tensile strain that evidences an unexpected relaxation phenomenon is also discussed both experimentally and theoretically.
- Received 6 November 1997
DOI:https://doi.org/10.1103/PhysRevB.57.14850
©1998 American Physical Society