First-principles optical properties of Si/CaF2 multiple quantum wells

Elena Degoli and Stefano Ossicini
Phys. Rev. B 57, 14776 – Published 15 June 1998
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Abstract

The optical properties of Si/CaF2 multiple quantum wells are studied ab initio by means of the linear-muffin-tin-orbital method. In particular, we investigate the dependence of the optoelectronic properties on the thickness of the Si wells. We find that below a well width of 20 Å, new transitions appear in the optical region with an evident polarization dependence. The oscillator strength of these transitions shows a dramatic increase as the width of the Si well decreases. A comparison is made with recent experimental work on similar systems. Our results show that quantum confinement and passivation are necessary in order to have photoluminescence in confined silicon-based materials.

  • Received 1 December 1997

DOI:https://doi.org/10.1103/PhysRevB.57.14776

©1998 American Physical Society

Authors & Affiliations

Elena Degoli and Stefano Ossicini

  • Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 41100 Modena, Italy

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Vol. 57, Iss. 23 — 15 June 1998

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