Structural model for the Si(100)4×3In surface phase

A. V. Zotov, A. A. Saranin, V. G. Lifshits, J.-T. Ryu, O. Kubo, H. Tani, M. Katayama, and K. Oura
Phys. Rev. B 57, 12492 – Published 15 May 1998
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Abstract

A model of the atomic arrangement of the Si(100)4×3In surface phase is proposed on the basis of the known data and the appearance of the Si(100)4×3In surface found in the present STM study at low bias voltages. The model incorporates a 4×1-reconstructed Si(100) substrate having every second top Si atom double row missing. Indium atoms of the overlayer occupy the sites where each In atom is bonded to one Si atom of top Si dimer and to two Si atoms in the lower bulklike Si(100) substrate layer. Three Si dimers and six In atoms form a unit cluster of the Si(100)4×3In surface reconstruction. The model successfully accounts for all available experimental data.

  • Received 17 November 1997

DOI:https://doi.org/10.1103/PhysRevB.57.12492

©1998 American Physical Society

Authors & Affiliations

A. V. Zotov

  • Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
  • Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia;
  • Institute of Automation and Control Processes, 690041 Vladivostok, Russia

A. A. Saranin

  • Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan;
  • Institute of Automation and Control Processes, 690041 Vladivostok, Russia;
  • Faculty of Physics and Engineering, Far Eastern State University, 690000 Vladivostok, Russia

V. G. Lifshits

  • Institute of Automation and Control Processes, 690041 Vladivostok, Russia;
  • Faculty of Physics and Engineering, Far Eastern State University, 690000 Vladivostok, Russia;
  • Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia

J.-T. Ryu, O. Kubo, H. Tani, M. Katayama, and K. Oura*

  • Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan

  • *Author to whom correspondence should be addressed. Fax: +81 6 876 4564. Electronic address: oura@ele.eng.osaka-u.ac.jp

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Vol. 57, Iss. 19 — 15 May 1998

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