Abstract
A model of the atomic arrangement of the surface phase is proposed on the basis of the known data and the appearance of the surface found in the present STM study at low bias voltages. The model incorporates a -reconstructed Si(100) substrate having every second top Si atom double row missing. Indium atoms of the overlayer occupy the sites where each In atom is bonded to one Si atom of top Si dimer and to two Si atoms in the lower bulklike Si(100) substrate layer. Three Si dimers and six In atoms form a unit cluster of the surface reconstruction. The model successfully accounts for all available experimental data.
- Received 17 November 1997
DOI:https://doi.org/10.1103/PhysRevB.57.12492
©1998 American Physical Society