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Magnetic-field-induced unbinding of the off-well-center D singlet state in GaAs/Al0.3Ga0.7As multiple quantum wells

Z. X. Jiang, B. D. McCombe, Jia-Lin Zhu, and W. Schaff
Phys. Rev. B 56, R1692(R) – Published 15 July 1997
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Abstract

Results of far-infrared Fourier-transform magnetotransmission from two GaAs/Al0.3Ga0.7As multiple quantum well samples δ-doped with Si-donor on- and off-well centers are compared. In contrast to well-center D ions, the off-well-center D singlet binding energy decreases with increasing magnetic field between 5.5 and 15 T, as reflected by the decreasing strength of the D singlet transition and a consequent increase of the neutral donor 1s2p+ transition. This observation represents a verification of the predicted magnetic-field-induced unbinding (magnetic evaporation) of shallow impurity states for the off-well-center D-ion system.

  • Received 31 March 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R1692

©1997 American Physical Society

Authors & Affiliations

Z. X. Jiang and B. D. McCombe

  • Department of Physics, SUNY at Buffalo, Buffalo, New York 14260

Jia-Lin Zhu

  • Tsinghua University, Beijing 100084, People’s Republic of China

W. Schaff

  • School of Electrical Engineering, Cornell University, Ithaca, New York 14853

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Vol. 56, Iss. 4 — 15 July 1997

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