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Spin-flip excitations in the fractional-quantum-Hall-effect regime studied by polarized photoluminescence of charged excitons

D. Gekhtman, E. Cohen, Arza Ron, and L. N. Pfeiffer
Phys. Rev. B 56, R12768(R) – Published 15 November 1997
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Abstract

We report on a low-temperature magneto-optical study of the spin-singlet charged exciton (Xs) transitions in GaAs/Al0.1Ga0.9As modulation-doped multiple quantum wells with an optically tuned two-dimensional electron gas (2DEG) density corresponding to a filling factor in the range 0<ν<~1. We find strong evidence for the effect of 2DEG magnetic correlations on the Xs spin-resolved transitions. The energy difference between the σ- and σ+-polarized Xs photoluminescence (PL) intensity maxima is found to oscillate with varying ν. The numerical derivative of these oscillations with respect to ν shows minima at odd denominator rational fractions and maxima at even denominator fractions, similar to the longitudinal resistivity measured in the fractional quantum Hall effect. At ν=1, the observed σ-polarized low-energy PL tail is interpreted (by a line-shape analysis) to be due to a finite-k 2DEG spin-wave emission coupled to the optical recombination of the Xs.

  • Received 9 April 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R12768

©1997 American Physical Society

Authors & Affiliations

D. Gekhtman

  • Physics Department, Massachusetts Institute of Technology, Cambridge, MA 02139

E. Cohen and Arza Ron

  • Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000, Israel

L. N. Pfeiffer

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 56, Iss. 20 — 15 November 1997

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