Excitons in extremely shallow quantum wells

J. Kossut, J. K. Furdyna, and M. Dobrowolska
Phys. Rev. B 56, 9775 – Published 15 October 1997
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Abstract

Excitons in extremely shallow semiconductor quantum wells are considered in the limit when both the conduction band and the valence band confining potentials are small compared to the binding energy of a three-dimensional (3D) exciton. Under these circumstances it is found that the quantization of the center-of-mass motion can make a sizable contribution to energies of excitonic optical transitions. A simple effective Hamiltonian is derived for describing this situation, with a potential that confines the motion of the exciton center of mass. The shape of the potential is approximated either by a parabolic profile (when quantum wells are narrow compared with the 3D exciton Bohr radius), or by a rectangular potential (for wide quantum wells), and the resultant eigenvalue problem is solved accordingly. The results are compared to experimental data obtained in magnetooptical studies of ZnSe/Zn1xMnxSe spin superlattices, giving excellent quantitative agreement.

  • Received 21 October 1996

DOI:https://doi.org/10.1103/PhysRevB.56.9775

©1997 American Physical Society

Authors & Affiliations

J. Kossut

  • Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warszawa, Poland

J. K. Furdyna and M. Dobrowolska

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

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Vol. 56, Iss. 15 — 15 October 1997

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