Competition effects in the carrier capture into InxGa1xAs/GaAs double-quantum-well structures

P. Borri, M. Gurioli, M. Colocci, F. Martelli, and M. Capizzi
Phys. Rev. B 56, 9228 – Published 15 October 1997
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Abstract

We report on an experimental study, using continuous-wave and time-resolved photoluminescence spectroscopy, of the carrier capture into InxGa1xAs/GaAs double-quantum-well structures. We observe oscillations in the carrier collection efficiency as a function of the excitation energy; the counter-phased modulations of the photoluminescence excitation spectra of the two wells clearly demonstrate a competition in the carrier capture into the wells. The time-resolved measurements provide a direct insight on the dynamics of the capture process.

  • Received 6 February 1997

DOI:https://doi.org/10.1103/PhysRevB.56.9228

©1997 American Physical Society

Authors & Affiliations

P. Borri, M. Gurioli, and M. Colocci

  • Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica and Laboratorio Europeo di Spettroscopie non Lineari, Largo Enrico Fermi 2, I-50125 Firenze, Italy

F. Martelli

  • Fondazione Ugo Bordoni, via Baldassarre Castiglione 59, I-00142 Roma, Italy

M. Capizzi

  • Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Università La Sapienza, Piazzale Aldo Moro 2, I-00185 Roma, Italy

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Vol. 56, Iss. 15 — 15 October 1997

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