Scaling behavior of the longitudinal and Hall resistivities in indium films

S. Okuma and N. Kokubo
Phys. Rev. B 56, 410 – Published 1 July 1997
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Abstract

We have made simultaneous measurements of the longitudinal ρxx and Hall ρxy resistivities for granular films of indium with different thicknesses (t¯=12, 20, and 60 nm) and the normal-state resistivities (ρxxn=25×105Ωm) at temperatures T down to 0.5 K and in fields B up to 7 T. A striking scaling behavior expressed as ρxy(T)=Aρxx(T)β has been observed for all the films studied irrespective of t¯ and ρxxn at fixed fields which are not close to a critical field BC. In the mixed state (B<BC and T<TC, where TC is the transition temperature), the coefficient A and exponent β (=23) are nearly independent of the field strength B and the film thickness t¯. In the vicinity of the field-driven superconductor-insulator transition, we have found the unusual insulating region BxxC<B<BxyC, where BxxC and BxyC represent critical fields determined by ρxx and ρxy, respectively, which tends to grow with increasing ρxxn and/or decreasing t¯. This region is similar to one found previously by Paalanen, Hebard, and Ruel in amorphous InOx thin films, and the present result is consistent with their notion that the insulating region corresponds to the Bose-glass insulator.

  • Received 22 July 1996

DOI:https://doi.org/10.1103/PhysRevB.56.410

©1997 American Physical Society

Authors & Affiliations

S. Okuma and N. Kokubo

  • Research Center for Very Low Temperature System, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan

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Vol. 56, Iss. 1 — 1 July 1997

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