Exciton center-of-mass dispersion in semiconductor quantum wells

Adriana L. C. Triques and José A. Brum
Phys. Rev. B 56, 2094 – Published 15 July 1997
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Abstract

We discuss the results of the calculation of the exciton center-of-mass dispersion in a semiconductor quantum well. Strong nonparabolicity arises due to the coupling among the excitons related to the heavy and light holes. We consider the effects of the coupling in the exciton dynamics by calculating the exciton average mass and spin.

  • Received 9 January 1997

DOI:https://doi.org/10.1103/PhysRevB.56.2094

©1997 American Physical Society

Authors & Affiliations

Adriana L. C. Triques and José A. Brum

  • Instituto de Física Gleb Wataghin, DFESCM, Universidade Estadual de Campinas, 13083-970 Campinas (SP), Brazil

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Issue

Vol. 56, Iss. 4 — 15 July 1997

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