Exciton-phonon interaction effects in quantum wells

Ruisheng Zheng and Mitsuru Matsuura
Phys. Rev. B 56, 2058 – Published 15 July 1997
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Abstract

Properties of excitons interacting with interface optical phonons and confined longitudinal optical phonons in semiconducting compound quantum wells are investigated theoretically. By using the nonseparable trial wave function the exciton binding energies and the interaction energies of excitons with every phonon mode in two typical quantum-well structures, GaAs/AlAs and CdSe/ZnSe, are calculated as a function of the well width. Some interesting features of the exciton-phonon interaction system in quantum wells are found and discussed. The theoretical result gives a reasonable explanation of the agreement of some simple exciton theories with experiments.

  • Received 27 January 1997

DOI:https://doi.org/10.1103/PhysRevB.56.2058

©1997 American Physical Society

Authors & Affiliations

Ruisheng Zheng and Mitsuru Matsuura

  • Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, 2557, Ube, 755, Japan

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Issue

Vol. 56, Iss. 4 — 15 July 1997

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